HIT647

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

-120

V

Collector to emitter voltage

VCEO

-100

V

Emitter to base voltage

VEBO

-6

V

Collector current

IC

-1.0

A

Collector peak current

IC  (peak)  *1

-2.0

A

Collector power dissipation

PC

0.9

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

-120

—

—

V

IC  = -100 mA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

-100

—

—

V

IC  = -10 mA, RBE  = ∞

Emitter to base breakdown voltage

V(BR)EBO

-6

—

—

V

IE  = -100 mA, IC = 0

Collector cutoff current

ICBO

—            

—

-500

nA

VCB  = -120 V, IE  = 0

Emitter cutoff current

IEBO

—

—

-500

nA

VEB  = -6 V, IC = 0

DC current transfer ratio

hFE1

140

—

350

—

VCE  = -2 V, IC  = -150 mA

hFE2

40

—

—

—

VCE  = -5 V, IC  =

Collector to emitter saturation voltage

VCE(sat)

—

—

-0.5

V

IC  = -500 mA, IB  = -50 mA

Base to emitter saturation voltage

VBE(sat)

—

—

-1.1

V

IC  = -500 mA, IB  = -50 mA