BCR3PM-14LG-(M)

品牌：【瑞萨】
类别：【晶闸管(可控硅)】
封装：TO-220F
库存：现货在线查看附件

Features

Outline

Applications

Washing machine, inversion operation of capacitor motor, and other general controlling devices

Maximum Ratings

Parameter	Symbol	Voltage class	Unit	Conditions
		14
Repetitive peak off-state voltageNote1	VDRM	800	V	Tj = 125°C
		700	V	Tj = 150°C
Non-repetitive peak off-state voltageNote1	VDSM	840	V

BCR3PM-14LG

Parameter	Symbol	Ratings	Unit	Conditions
RMS on-state current	IT (RMS)	3.0	A	Commercial frequency, sine full wave 360° conduction, Tc = 130°C
Surge on-state current	ITSM	30	A	60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t for fusing	I2t	3.7	A2s	Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Peak gate power dissipation	PGM	5	W
Average gate power dissipation	PG (AV)	0.5	W
Peak gate voltage	VGM	10	V
Peak gate current	IGM	2	A
Junction temperature	Tj	– 40 to +150	°C
Storage temperature	Tstg	– 40 to +150	°C
Mass	—	2.0	g	Typical value
Isolation voltage	Viso	2000	V	Ta = 25°C, AC 1 minute, T1 · T2 · G terminal to case

Notes: 1. Gate open

Electrical Characteristics

Parameter		Symbol	Min.	Typ.	Max.	Unit	Test conditions
Repetitive peak off-state current		IDRM	—	—	2.0	mA	Tj = 150°C, VDRM applied
On-state voltage		VTM	—	—	1.6	V	Tc = 25°C, ITM = , Instantaneous measurement
Note2 Gate trigger voltage	I	VFGTI	—	—	1.5	V	Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W
	II	VRGTI	—	—	1.5	V
	III	VRGTIII	—	—	1.5	V
Note2 Gate trigger current	I	IFGTI	—	—	30	mA	Tj = 25°C, VD = 6 V, RL = 6 W, RG = 330 W
	II	IRGTI	—	—	30	mA
	III	IRGTIII	—	—	30	mA
Gate non-trigger voltage		VGD	0.2/0.1	—	—	V	Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance		Rth (j-c)	—	—	5.2	°C/W	Junction to caseNote3
Critical-rate of rise of off-state commutating voltageNote4		(dv/dt)c	5/1	—	—	V/ms	Tj = 125°C/150°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is /W.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = –/ms

3. Peak off-state voltage

VD = 400 V

Supply Voltage Time

(di/dt)c

Main Current Time

Main Voltage Time

(dv/dt)c VD

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