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华端智慧电子
Application
High speed power switching
Features
Outline
Absolute Maximum Ratings
| Item | Symbol | Ratings | Unit | |
| Drain to source voltage | VDSS | 900 | V | |
| Gate to source voltage | VGSS | ±30 | V | |
| Drain current | ID | 4 | A | |
| Drain peak current | ID(pulse)*1 | 10 | A | |
| Body to drain diode reverse drain current | IDR | 4 | A | |
| Channel dissipation | Pch*2 | 35 | W | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature | Tstg | –55 to +150 | °C | |
Notes 1. PW 10 μs, duty cycle 1 %
2. Value at Tc = 25 °C
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